Premium
57.1: High‐Performance Poly‐Si TFTs Using Pressure‐Induced Nucleation Technology
Author(s) -
Kang Myung-Koo,
Kim Si Joon,
Kim Hyun Jae
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10357
Subject(s) - thin film transistor , nucleation , materials science , polycrystalline silicon , optoelectronics , transistor , crystallite , nanotechnology , electrical engineering , metallurgy , layer (electronics) , chemistry , engineering , organic chemistry , voltage
Here, we proposed a simple method to improve the performance of polycrystalline Si (poly‐Si) thin‐film transistors (TFTs) via pressure‐induced nucleation (PIN). The TFTs formed using the PIN process exhibited a high field‐effect mobility greater than 160 cm 2 /Vs, which was achieved using only six laser exposures.