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45.1: Invited Paper : Future Possibilities of Crystalline Oxide Semiconductor, Especially C ‐Axis‐Aligned Crystalline IGZO
Author(s) -
Yamazaki Shunpei,
Matsuo Takuya
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10261
Subject(s) - materials science , amorphous solid , semiconductor , crystal (programming language) , oxide , deposition (geology) , mechanism (biology) , optoelectronics , crystal structure , amorphous semiconductors , nanotechnology , crystallography , thin film , computer science , chemistry , physics , geology , metallurgy , paleontology , quantum mechanics , sediment , programming language
Through detailed analyses, the structure of c‐axis‐aligned crystalline (CAAC) IGZO, which is a dense, stable crystal morphology, is found to differ from single‐crystal and amorphous structures. We propose a model for determining its film deposition mechanism. CAAC‐IGZO field‐effect transistors find application in displays for use as human‐machine interfaces.

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