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P‐149: Oxide TFTs on Fabric Substrates for Wearable Displays
Author(s) -
Park Junhong,
Kim Eungtaek,
Jang Woo Jae,
Park ByoungCheul,
Kang SinHyeok,
Park SangHee K.,
Choi Kyung Cheol
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10242
Subject(s) - materials science , thin film transistor , optoelectronics , substrate (aquarium) , fabrication , atomic layer deposition , electrode , layer (electronics) , oxide , evaporation , wearable computer , nanotechnology , computer science , metallurgy , embedded system , chemistry , medicine , oceanography , alternative medicine , physics , pathology , thermodynamics , geology
Transition metal oxide TFTs were fabricated on a fabric substrate for wearable display. Atomic layer deposition (ALD) was employed to reduce process temperature. The gate electrode (Ti/Al/Ti) was deposited by thermal evaporation. The gate insulator and channel layer were Al 2 O 3 and ZnO, respectively. Ti/Al was deposited by thermal evaporation to make the source and drain contacts for ZnO TFTs. The TFT fabricated on the fabric substrate showed TFT driving behavior with the following performances: µ FE = 0.6 cm 2 /V‐s, on off ratio = 9.07×10 2 , Subthreshold Swing = 1.725 decade ‐1 , V th = ‐1.57 V. The results confirmed that it may be feasible to apply our low temperature fabrication of TFTs using the ALD process to wearable displays based on fabric substrates.