Premium
7.2: A Pixel Structure Using Switching Error Reduction Method for High Image Quality AMOLED Displays
Author(s) -
Keum NackHyeon,
Oh Kyonghwan,
Hong SeongKwan,
Kwon OhKyong
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10227
Subject(s) - amoled , pixel , oled , materials science , image quality , capacitor , reduction (mathematics) , image (mathematics) , quality (philosophy) , threshold voltage , computer science , voltage , electronic engineering , optoelectronics , active matrix , artificial intelligence , electrical engineering , mathematics , thin film transistor , transistor , engineering , physics , layer (electronics) , nanotechnology , geometry , quantum mechanics
In this paper, an active matrix organic light emitting diode (AMOLED) pixel structure is proposed to improve the image quality by using the switching error reduction method. The switching error is decreased by floating the storage capacitor before it is induced. The simulation results show that the switching error and the emission current error of the proposed pixel structure are reduced by 91.4% and 77.5%, respectively, compared to those of the conventional pixel structure, when the threshold voltage of the switching TFT varies from ‐1.9 V to ‐1.1 V.