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51.2: The Development of a High Mobility Zinc Oxynitride TFT for AMOLED
Author(s) -
Yan Liangchen,
Wang Meili,
Zhang Li,
Wang Dongfang,
Liu Fengjuan,
Yuan Guangcai,
Wang Gang
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10213
Subject(s) - thin film transistor , amoled , materials science , optoelectronics , saturation (graph theory) , zinc , reliability (semiconductor) , oled , layer (electronics) , nanotechnology , active matrix , metallurgy , mathematics , physics , power (physics) , combinatorics , quantum mechanics
TFTs with zinc oxynitride (ZnON) as active layer were developed, and a saturation mobility over 50 cm 2 /Vs was achieved. The ZnON TFTs show superior I‐V performance and Vth uniformity. A 14 inch WOLED panel driven by ZnON TFT was demonstrated. The reliability of ZnON panels was evaluated at high‐temperatureoperation and low‐temperature‐operation conditions, and satisfied results were achieved.