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41.2: High Reliability Integrated Gate Driver Circuit in Panel for Automotive Display
Author(s) -
Shim Dahye,
Choi JoungMi,
Jang HyungUk,
Nam SangJin,
Kim DongKyu,
Yoo SeungJin,
Kim TaeHun,
Lee JuYoung,
Jun Myungchul,
Kang InByeong
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10210
Subject(s) - reliability (semiconductor) , compensation (psychology) , transistor , automotive industry , plasma display , driver circuit , gate driver , electrical engineering , computer science , electronic engineering , engineering , power (physics) , voltage , chemistry , quantum mechanics , aerospace engineering , psychoanalysis , psychology , physics , electrode
The automotive display system requires high reliability to the longterm usage and the wide operation temperature range. The performance of the display system relies on the characteristics of a‐Si:H transistors in the driver circuit. We here propose the new a‐Si:H integrated gate driver circuit, where the self‐compensation transistors are intentionally added to stabilize the bias conditions at the extreme environment. The additional pull‐down transistors, only operating at low temperatures, compensate the decreased oncurrent of the circuit at the extreme condition. This consequently improves the reliability of the output characteristics for the display system.