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6.2: Hybrid‐Type Temperature Sensors Using Thin‐Film Transistors: Characteristic Comparion of n, p., and Pin‐Type Transistors
Author(s) -
Kito Katsuya,
Hayashi Hisashi,
Kitajima Shuhei,
Matsuda Tokiyoshi,
Kimura Mutsumi
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10202
Subject(s) - transistor , materials science , thin film transistor , optoelectronics , oscillation (cell signaling) , electrical engineering , nanotechnology , layer (electronics) , engineering , chemistry , voltage , biochemistry
We have developed hybrid‐type temperature sensors using thinfilm transistors. Particularly in this presentation, we compare characteristics of those using n, p, and pin‐type transistors. For all types, temperature dependences of oscillation frequencies are confirmed, which indicates that they can be applied to temperature sensors.