P‐177L:  Late‐News Poster : Highly Efficient Inverted OLEDs using A New Transparent Amorphous Oxide Semiconductor | Zendy

Kim Junghwan | Zendy; Watanabe Satoru | Zendy; Matsuzaki Eiji | Zendy; Nakamura Nobuhiro | Zendy; Miyakawa Naomichi | Zendy; Toda Yoshitake | Zendy; Kamiya Toshio | Zendy; Hosono Hideo | Zendy

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P‐177L: Late‐News Poster : Highly Efficient Inverted OLEDs using A New Transparent Amorphous Oxide Semiconductor

Author(s) -

Kim Junghwan,

Watanabe Satoru,

Matsuzaki Eiji,

Nakamura Nobuhiro,

Miyakawa Naomichi,

Toda Yoshitake,

Kamiya Toshio,

Hosono Hideo

Publication year - 2015

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10190

Subject(s) - ohmic contact , oled , materials science , optoelectronics , amorphous solid , transparency (behavior) , work function , amorphous semiconductors , semiconductor , electrode , diode , layer (electronics) , oxide , nanotechnology , computer science , chemistry , crystallography , metallurgy , silicon , computer security

Highly efficient inverted OLED was fabricated by using a newly developed new transparent amorphous oxide semiconductor (TAOS) for an electron transport layer. This new TAOS has high mobility (˜1cm 2 /Vs), low work function (˜3.5 eV), sufficient chemical stability and high transparency, and can form Ohmic contact with conventional electrodes (ITO, Al, etc.).

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