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P‐177L: Late‐News Poster : Highly Efficient Inverted OLEDs using A New Transparent Amorphous Oxide Semiconductor
Author(s) -
Kim Junghwan,
Watanabe Satoru,
Matsuzaki Eiji,
Nakamura Nobuhiro,
Miyakawa Naomichi,
Toda Yoshitake,
Kamiya Toshio,
Hosono Hideo
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10190
Subject(s) - ohmic contact , oled , materials science , optoelectronics , amorphous solid , transparency (behavior) , work function , amorphous semiconductors , semiconductor , electrode , diode , layer (electronics) , oxide , nanotechnology , computer science , chemistry , crystallography , metallurgy , silicon , computer security
Highly efficient inverted OLED was fabricated by using a newly developed new transparent amorphous oxide semiconductor (TAOS) for an electron transport layer. This new TAOS has high mobility (˜1cm 2 /Vs), low work function (˜3.5 eV), sufficient chemical stability and high transparency, and can form Ohmic contact with conventional electrodes (ITO, Al, etc.).