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P‐176L: Late‐News Poster : Deposition and Structuring Processes of a Newly Developed Transparent Amorphous Oxide Semiconductor for the Electron Transport and Injection Layers of AM‐OLEDs
Author(s) -
Nakamura Nobuhiro,
Watanabe Toshinari,
Kim Junghwan,
Watanabe Satoru,
Matsuzaki Eiji,
Toda Yoshitake,
Miyakawa Naomichi,
Fujitsu Satoru,
Hosono Hideo
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10188
Subject(s) - structuring , amorphous solid , deposition (geology) , materials science , aperture (computer memory) , oled , semiconductor , optoelectronics , oxide , yield (engineering) , nanotechnology , composite material , chemistry , engineering , metallurgy , layer (electronics) , mechanical engineering , business , geology , sediment , paleontology , organic chemistry , finance
Processes of a new transparent amorphous oxide semiconductor (TAOS) as ETL and EIL were developed. Conventional processes can be applied for the deposition and structuring of the new TAOS, which enables to fabricate inverted OLEDs. The new TAOS materials make it possible to realize thicker ETL, potentially giving impacts not only on yield, but also on higher aperture ratio and cost reduction by omitting resin banks.