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39.2: Invited Paper : Recent Progress of Oxide‐Semiconductor‐Based P ‐channel TFTs
Author(s) -
Nomura Kenji
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10167
Subject(s) - thin film transistor , oxide thin film transistor , oxide , channel (broadcasting) , semiconductor , materials science , compatibility (geochemistry) , optoelectronics , computer science , electronic engineering , nanotechnology , electrical engineering , engineering , metallurgy , layer (electronics) , composite material
Oxide semiconductor based TFT is to date accepted as a emerging technology that enable the development of next generation display and flexible technologies because of its superior properties and wide compatibility of processing. However, the largest drawback is the absence of high performance p‐channel oxide‐TFT. Here we review the recent progress of oxide based p‐channel TFT and discuss how we improve p‐channel TFT performances.