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P‐138: Metal Oxide Thin Films for Hole‐Injection Layers of Organic Emitting Diodes
Author(s) -
Park Jaeun,
Kim Deakyoung,
Fu Yan,
Chung Ho Kyoon,
Chae Heeyeop
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10158
Subject(s) - oled , pedot:pss , materials science , non blocking i/o , diode , oxide , current density , optoelectronics , metal , thin film , current (fluid) , layer (electronics) , nanotechnology , metallurgy , chemistry , electrical engineering , catalysis , organic chemistry , physics , engineering , quantum mechanics
In order to replace PEDOT:PSS, solution processed metal oxide thin films, which are NiO x , MoO x and VO x , were developed for hole‐injection layers of OLED. MoO x and VO x have similar to device performance based on PEDOT. Specially, current efficiency of s‐MoO x layers was better than e‐MoO x layers by reducing current density in OLED.