P‐138: Metal Oxide Thin Films for Hole‐Injection Layers of Organic Emitting Diodes | Zendy

Park Jaeun | Zendy; Kim Deakyoung | Zendy; Fu Yan | Zendy; Chung Ho Kyoon | Zendy; Chae Heeyeop | Zendy

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P‐138: Metal Oxide Thin Films for Hole‐Injection Layers of Organic Emitting Diodes

Author(s) -

Park Jaeun,

Kim Deakyoung,

Fu Yan,

Chung Ho Kyoon,

Chae Heeyeop

Publication year - 2015

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10158

Subject(s) - oled , pedot:pss , materials science , non blocking i/o , diode , oxide , current density , optoelectronics , metal , thin film , current (fluid) , layer (electronics) , nanotechnology , metallurgy , chemistry , electrical engineering , catalysis , organic chemistry , physics , engineering , quantum mechanics

In order to replace PEDOT:PSS, solution processed metal oxide thin films, which are NiO x , MoO x and VO x , were developed for hole‐injection layers of OLED. MoO x and VO x have similar to device performance based on PEDOT. Specially, current efficiency of s‐MoO x layers was better than e‐MoO x layers by reducing current density in OLED.

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