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P‐50: Integrated Gate Drive Circuit Employing IGZO TFTs for AMOLED Compensative Pixel Driving
Author(s) -
Cao Kun,
Li Quanhu,
Song Chen,
Zhang Baoxia,
Li Yongqian,
Meng Song,
Yin Jingwen,
Gai Cuili,
Wang Longyan,
Wang Yu,
Xie Hongjun,
Wu Zhongyuan,
Wang Gang
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10110
Subject(s) - amoled , gate driver , electronic circuit , duty cycle , compensation (psychology) , materials science , threshold voltage , driver circuit , electronic engineering , logic gate , voltage , electrical engineering , computer science , engineering , transistor , thin film transistor , active matrix , psychology , layer (electronics) , psychoanalysis , composite material
In order to compensate the threshold voltage variation while obtaining the sufficient data charging time, the AMOLED compensative pixel circuit needs to be driven by multi‐pulse signals which have continuous high/low level pulses. By using traditional gate driver on array (GOA) with half duty‐cycle delay of clock signals, the area of shift register is doubled, increasing the bezel width and power consumptions. In this paper, novel compact integrated gate driver circuit architectures for AMOLED pixel compensation purpose are presented. Outputs with programmable pulse width and number are achieved in these gate driving circuits without consuming extra large areas. Inner feedback technique is adopted in GOA circuit for leakage current cutting of depletion mode IGZO TFTs. The simulation result shows that these circuits work successfully with maximum ±3V threshold voltage shift. These GOA circuits can be used for internal or external V th compensation techniques of AMOLED panel.