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P‐29: A Polymer/Fullerene‐based Material in Near‐Infrared Photodetector Application
Author(s) -
Hsiao HsiaTsai,
Liang YuHsin,
Peng HsiangI,
Tu ChunHao,
Liu ChuYu,
Chiang MingFeng
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10076
Subject(s) - photocurrent , materials science , terthiophene , optoelectronics , photodetector , infrared , polymer , fullerene , dark current , near infrared spectroscopy , photoconductivity , optics , chemistry , composite material , organic chemistry , physics
A novel semiconducting polymer, PDPP3T, with alternating diketopyrrolopyrrole and terthiophene units is presented in this study. Due to PDPP3T has a small band gap of 1.3 eV, and high hole mobility of 0.04 cm(2) V(‐1) s(‐1), it can be used for organic photo sensor to absorb the near infrared (NIR) parts of the spectrum. The photo sensor are fabricated from Poly (diketopyrrolopyrrole‐terthiophene) (PDPP3T) and [6,6]‐phenyl C61‐butylric acid methyl ester (PCBM) using a solution‐based, temperature assisted deposition protocol. Devices made by this protocol lead to photo and dark current of around 4.6µA/cm2 and 2.1nA/cm2 at ‐1V. The device yields a good linear response of photocurrent to the near infrared exposure (from 50‐400µW/cm2) for a range of operating biases