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P‐155L: Late‐News Poster : Low Temperature Activation of In‐Ga‐Zn‐O Thin Film Transistor using High Pressure Annealing
Author(s) -
Kim WonGi,
Tak Young Jun,
Jung Tae Soo,
Park Sung Pyo,
Lee Heesoo,
Park Jeong Woo,
Kim Hyun Jae
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10070
Subject(s) - thin film transistor , annealing (glass) , materials science , amorphous solid , activation energy , gallium , indium , thin film , transistor , thermal stability , oxygen pressure , optoelectronics , metallurgy , oxygen , layer (electronics) , composite material , chemical engineering , nanotechnology , chemistry , crystallography , electrical engineering , engineering , organic chemistry , voltage
We investigated the effects of high‐pressure annealing as a source of activation energy to form the amorphous indium gallium zinc oxide (a‐IGZO) channel layer at 100°C. Thermal activation under oxygen pressure was used to facilitate the formation of channel layer as well as to improve positive bias stress stability.