P‐155L:  Late‐News Poster : Low Temperature Activation of In‐Ga‐Zn‐O Thin Film Transistor using High Pressure Annealing | Zendy

Kim WonGi | Zendy; Tak Young Jun | Zendy; Jung Tae Soo | Zendy; Park Sung Pyo | Zendy; Lee Heesoo | Zendy; Park Jeong Woo | Zendy; Kim Hyun Jae | Zendy

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P‐155L: Late‐News Poster : Low Temperature Activation of In‐Ga‐Zn‐O Thin Film Transistor using High Pressure Annealing

Author(s) -

Kim WonGi,

Tak Young Jun,

Jung Tae Soo,

Park Sung Pyo,

Lee Heesoo,

Park Jeong Woo,

Kim Hyun Jae

Publication year - 2015

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10070

Subject(s) - thin film transistor , annealing (glass) , materials science , amorphous solid , activation energy , gallium , indium , thin film , transistor , thermal stability , oxygen pressure , optoelectronics , metallurgy , oxygen , layer (electronics) , composite material , chemical engineering , nanotechnology , chemistry , crystallography , electrical engineering , engineering , organic chemistry , voltage

We investigated the effects of high‐pressure annealing as a source of activation energy to form the amorphous indium gallium zinc oxide (a‐IGZO) channel layer at 100°C. Thermal activation under oxygen pressure was used to facilitate the formation of channel layer as well as to improve positive bias stress stability.

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