P‐152L:  Late‐News Poster : Simple Method for Low‐Temperature Processed In‐Ga‐Zn‐O Thin‐Film Transistors by Vertical Diffusion Technique | Zendy

Kim Si Joon | Zendy; Yoon Seokhyun | Zendy; Tak Young Jun | Zendy; Kim Hyun Jae | Zendy

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P‐152L: Late‐News Poster : Simple Method for Low‐Temperature Processed In‐Ga‐Zn‐O Thin‐Film Transistors by Vertical Diffusion Technique

Author(s) -

Kim Si Joon,

Yoon Seokhyun,

Tak Young Jun,

Kim Hyun Jae

Publication year - 2015

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10066

Subject(s) - thin film transistor , materials science , annealing (glass) , fabrication , optoelectronics , transistor , diffusion , thin film , simple (philosophy) , nanotechnology , electrical engineering , layer (electronics) , composite material , engineering , philosophy , physics , epistemology , voltage , thermodynamics , medicine , alternative medicine , pathology

Here, we proposed a novel and simple strategy for fabricating solution‐processed In‐Ga‐Zn‐O thin‐film transistors (TFTs) at low annealing temperature via vertical diffusion technique. This technique enables a significant reduction of processing temperatures (< 300°C) with maintaining its electrical performances and is useful in the fabrication of flexible/transparent oxide TFTs.

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