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P‐152L: Late‐News Poster : Simple Method for Low‐Temperature Processed In‐Ga‐Zn‐O Thin‐Film Transistors by Vertical Diffusion Technique
Author(s) -
Kim Si Joon,
Yoon Seokhyun,
Tak Young Jun,
Kim Hyun Jae
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10066
Subject(s) - thin film transistor , materials science , annealing (glass) , fabrication , optoelectronics , transistor , diffusion , thin film , simple (philosophy) , nanotechnology , electrical engineering , layer (electronics) , composite material , engineering , philosophy , physics , epistemology , voltage , thermodynamics , medicine , alternative medicine , pathology
Here, we proposed a novel and simple strategy for fabricating solution‐processed In‐Ga‐Zn‐O thin‐film transistors (TFTs) at low annealing temperature via vertical diffusion technique. This technique enables a significant reduction of processing temperatures (< 300°C) with maintaining its electrical performances and is useful in the fabrication of flexible/transparent oxide TFTs.