Premium
P‐26: High Capacity Memory using Oxide Based Schottky Diode and Unipolar Resistive Array
Author(s) -
Fan YangShun,
Chang ChihHsiang,
Zheng GuangTing,
Chang CheChia,
Liu PoTsun
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10063
Subject(s) - schottky diode , optoelectronics , materials science , resistive random access memory , diode , resistive touchscreen , resistor , schottky barrier , tin oxide , crosstalk , spice , annealing (glass) , doping , electrical engineering , electronic engineering , voltage , engineering , composite material
The Al‐doped zinc tin oxide based Schottky diode and resistive switching memory (RRAM) were demonstrated. Thanks to the significant improvement on the forward‐bias current of proposed AZTO‐based Schottky diode by post‐deposition annealing, the integration of one diode and one resistor (1D1R) configuration through the SPICE simulation was achieved. Furthermore, the read margin analysis of feasible array size was carried out and 9.4k bits array can be realized by anti‐crosstalk properties of the AZTO‐based 1D1R devices.