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P‐25: Enhancement in Positive Bias Stress Stability of In‐Ga‐Zn‐O Thin‐Film Transistors with Vertically Graded‐Oxygen‐Vacancy Active Layer
Author(s) -
Kim Yeonggyu,
Yoon Seokhyun,
Hong Seonghwan,
Choi Jong Sun,
Kim Hyun Jae
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10062
Subject(s) - thin film transistor , materials science , threshold voltage , active layer , amorphous solid , optoelectronics , layer (electronics) , stress (linguistics) , transistor , sputtering , gallium , oxygen , indium , vacancy defect , thin film , voltage , nanotechnology , metallurgy , electrical engineering , chemistry , crystallography , linguistics , philosophy , engineering , organic chemistry
To enhance the bias stability of amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistors (TFTs), we proposed a simple method to deposit the vertically graded‐oxygen‐vacancy active layer (VGA). The oxygen partial pressure was varied during deposition in order to fabricate VGA TFTs using sputtering. By adopting this method, we could control the concentration of oxygen vacancy in active layer according to the depth. The threshold voltage shift of optimized VGA TFTs was drastically improved under positive bias stress (PBS) condition compared with conventional ones.