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P‐24: Optimization of the Fabrication Process for Bridged‐Grain Metal Induced Crystallization TFTs
Author(s) -
Chen Rongsheng,
Zhou Wei,
Zhang Meng,
Xia Zhihe,
Wong Man,
Kwok HoiSing
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10060
Subject(s) - thin film transistor , crystallization , materials science , fabrication , amorphous silicon , amorphous solid , optoelectronics , silicon , inert , process (computing) , inert gas , grain size , process optimization , nanotechnology , chemical engineering , metallurgy , crystallography , composite material , computer science , crystalline silicon , chemistry , layer (electronics) , pathology , medicine , alternative medicine , engineering , operating system , organic chemistry
Bridged‐grain (BG) metal induced crystallization (MIC) thin film transistor (TFTs) technology has great potential to realize next generation high resolution and large size flat‐panel displays. The required time for MIC crystallization process of amorphous silicon (a‐Si) thin film is typically about 10 hours in inert atmosphere. In this paper we proposed two optimized schemes for BG‐MIC TFTs to improve the device performance and reduce the process time.