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P‐21: Effects of Low Hydrogen Dielectric Film on a‐IGZO TFT Properties
Author(s) -
Liu Xiaodi,
Yan Liangchen,
Yuan Guangcai,
Chen Lei,
Cheng Jun,
Jiang Chunsheng,
Kong Xiangyong,
Chen Jiangbo,
Liu Wei,
Shen Wulin,
Gang Wang
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10055
Subject(s) - thin film transistor , materials science , dielectric , amorphous solid , optoelectronics , gate dielectric , backplane , oxide thin film transistor , hydrogen , plasma enhanced chemical vapor deposition , transistor , field effect , electrical engineering , composite material , chemical vapor deposition , voltage , crystallography , chemistry , layer (electronics) , organic chemistry , engineering
Low hydrogen dielectric film deposition method was used in PECVD. The properties of amorphous IGZO (a‐IGZO) bottom‐gate thin film transistor using this method were investigated and compared. The PBTS (Positive Bias Temperature Stress) and NBTS (Negative Bias Temperature Stress) reduced to 0.481V, and ‐0.269V, respectively. The overall properties of a‐IGZO TFT using low hydrogen dielectric recipe meet the demand of oxide backplane in both LCD and OLED field.