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P‐20: The Effect of Oxide‐TFT Design on Voltage‐Threshold Shift
Author(s) -
Wang Xiaolin,
Qin Wei,
Zhang Hui,
Xiao Li,
Um Yoonsung,
Peng Kuanjun,
IM Yunsik,
Jun Jungmok
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10054
Subject(s) - thin film transistor , threshold voltage , materials science , voltage , oxide , optoelectronics , instability , electrical engineering , transistor , mechanics , physics , nanotechnology , engineering , metallurgy , layer (electronics)
The threshold voltage (V th ) instability of oxide TFT is the largest hindrance to mass production. Stability improvement mainly focuses on the material and the process adjustment. Results in this study show that reasonable designs (such as floating SD, IGZO separation, etc.)reduce V th shift. The influence mechanism of TFT shape to V th shift is discussed in this paper.