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P‐19: Effect of Strain on Characteristics of Amorphous In‐Ga‐Zn‐O TFTs Fabricated on Engineered Aluminum Substrates
Author(s) -
Mahmoudabadi Forough,
Hatalis Miltiadis,
Shah Kirit N.,
Levendusky Thomas L.
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10053
Subject(s) - materials science , aluminium , amorphous solid , thin film transistor , optoelectronics , bending , strain (injury) , nanotechnology , composite material , crystallography , chemistry , layer (electronics) , medicine
This study reports the effect of strain induced by bending on characteristics of a‐IGZO TFTs fabricated on conformal aluminum substrates. The successful demonstration of IGZO TFTs on aluminum substrates presented in this study points to the promise of aluminum substrates for the use in future flexible display and electronics applications.