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P‐18: Extraction and Simulation with Time Dependent V th Shift Model for IGZO Panel
Author(s) -
Wu Zhongyuan,
Cao Kun,
Wang Longyan,
Yin Jingwen,
Li Quanhu,
Li Yongqian,
Gai Cuili,
Zhang Baoxia,
Wang Gang,
Lin Scott,
Wang ChiWei,
Huang Leon,
Wei YouPang,
Liu PoTsun
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10049
Subject(s) - dependency (uml) , voltage , threshold voltage , test (biology) , materials science , electronic engineering , computer science , electrical engineering , engineering , transistor , paleontology , software engineering , biology
The impact of stress effect to the performance of an IGZO panel is discussed in this paper. Depart from conventional method of observing the threshold voltage (V th ) shift, the time dependency of serial I D ‐V G test is included in building an accurate V th shift model. The model can be used to simulate the IGZO TFT current change under fixed bias for aiding the circuit design and optimization.

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