P‐17: High Mobility ITZO BCE Type TFTs for AMOLED Applications | Zendy

Liu Fengjuan | Zendy; Wang Dongfang | Zendy; Xin Longbao | Zendy; Yan Liangchen | Zendy; Wang Meili | Zendy; Yuan Guangcai | Zendy; Wang Gang | Zendy

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P‐17: High Mobility ITZO BCE Type TFTs for AMOLED Applications

Author(s) -

Liu Fengjuan,

Wang Dongfang,

Xin Longbao,

Yan Liangchen,

Wang Meili,

Yuan Guangcai,

Wang Gang

Publication year - 2015

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10048

Subject(s) - amoled , materials science , optoelectronics , threshold voltage , thin film transistor , reliability (semiconductor) , voltage , electrical engineering , transistor , nanotechnology , layer (electronics) , engineering , physics , active matrix , power (physics) , quantum mechanics

BCE type oxide semiconductor TFTs with high mobility and high photo reliability has been developed using ITZO as a channel material. The mobility was over 25 cm 2 /Vs and the threshold voltage shifts of BITS were successfully reduced to 0.4V. Furthermore, a 14inch AMOLED plane based on ITZOBCE TFTs was fabricated.

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