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P‐17: High Mobility ITZO BCE Type TFTs for AMOLED Applications
Author(s) -
Liu Fengjuan,
Wang Dongfang,
Xin Longbao,
Yan Liangchen,
Wang Meili,
Yuan Guangcai,
Wang Gang
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10048
Subject(s) - amoled , materials science , optoelectronics , threshold voltage , thin film transistor , reliability (semiconductor) , voltage , electrical engineering , transistor , nanotechnology , layer (electronics) , engineering , physics , active matrix , power (physics) , quantum mechanics
BCE type oxide semiconductor TFTs with high mobility and high photo reliability has been developed using ITZO as a channel material. The mobility was over 25 cm 2 /Vs and the threshold voltage shifts of BITS were successfully reduced to 0.4V. Furthermore, a 14inch AMOLED plane based on ITZOBCE TFTs was fabricated.