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P‐16: The Research of Dual‐Layer Channel ITO/MZO Thin Film Transistors Fabricated on Glass at Low Temperature
Author(s) -
Shi Pan,
Han Dedong,
Yu Wen,
Chen Zhuofa,
Zhao Nannan,
Zhao Feilong,
Wu Jing,
Dong Junchen,
Cong Yingying,
Huang Lingling,
Zhang Yi,
Zhang Shengdong,
Zhang Xing,
Wang Yi
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10046
Subject(s) - thin film transistor , materials science , threshold voltage , layer (electronics) , optoelectronics , substrate (aquarium) , channel (broadcasting) , transistor , saturation (graph theory) , dual layer , voltage , electrical engineering , composite material , engineering , mathematics , oceanography , combinatorics , geology
High‐performance dual‐layer channel ITO/MZO thin film transistors have been successfully fabricated on glass substrate at low temperature. The dual‐layer channel is composed of ITO and MZO layers. The use of the a‐ITO layer brought about enhanced subthreshold swing, enhanced saturation mobility and decreased threshold voltage compared to the MZO TFTs.