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P‐13: The Relationship Between Crystallinity and Device Characteristics of In‐Sn‐Zn‐Oxide
Author(s) -
aka Yusuke,
Takasu Takako,
Ishihara Noritaka,
Oota Masashi,
Ishiguro Yoshimi,
Kurosawa Yoichi,
Dairiki Koji,
Yamazaki Shunpei
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10042
Subject(s) - crystallinity , oxide , materials science , chemical engineering , optoelectronics , metallurgy , composite material , engineering
We have reported that the transistors having the c‐axis‐alignedcrystalline (CAAC) In‐Ga‐Zn‐oxide show good performance. For In‐Sn‐Zn‐oxide, we investigated relation between crystallinity and electrical properties. The experimental results suggest that In‐Sn‐Zn‐oxide can have a layered structure like a CAAC structure, and their high crystallinity improves device performance.