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P‐12: A Study on the Characteristics of Crystalline Indium‐Gallium‐Zinc‐Oxide TFTs
Author(s) -
Park Kyung,
Shin Hyun Soo,
Bae Jonguk,
Kwon JangYeon
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10039
Subject(s) - materials science , amorphous solid , annealing (glass) , thin film transistor , zinc , optoelectronics , indium , gallium , nanotechnology , metallurgy , crystallography , chemistry , layer (electronics)
IGZO thin films were crystallized by annealing with the aim of a high device performance. The electrical properties and reliability under various stress conditions of crystalline‐IGZO (c‐IGZO) TFTs were investigated, compared to conventional amorphous‐IGZO (a‐IGZO). In addition, effects of IGZO thickness on the electrical properties of c‐IGZO were also studied.