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P‐10: Comparative Studies of ZnON and ZnO Thin Film Transistors Fabricated by DC Reactive Sputtering Method
Author(s) -
Ok KyungChul,
Jeong HyunJun,
Lee HyunMo,
Kim HyunSuk,
Park JinSeong
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10036
Subject(s) - thin film transistor , x ray photoelectron spectroscopy , materials science , sputtering , annealing (glass) , analytical chemistry (journal) , torr , transistor , thin film , optoelectronics , nanotechnology , chemical engineering , chemistry , metallurgy , electrical engineering , layer (electronics) , voltage , engineering , physics , chromatography , thermodynamics
DC reactive sputtered ZnO and ZnON thin film transistors (TFTs) was fabricated in order to investigate the role of nitrogen element in the ZnO matrix. After low vacuum annealing at 250°C, ZnON TFTs exhibited superior device performances (V th = ‐0.16V, µ sat = 40.87cm 2 /Vs and SS = 0.77V/decade), comparing with ZnO TFT's performance (V th = 3.28V, µ sat = 0.99 cm 2 /Vs and SS = 1.22 V/decade) under vacuum probe condition (˜10 ‐3 torr). The physical and electronic structure was analyzed by X‐ray diffraction and X‐ray absorption spectroscopy, respectively. The chemical bonding status was also analyzed by X‐ray photoelectron spectroscopy. Consequently, nitrogen incorporation in DC reactive spurring can suppress the crystal growth and enhance electron mobility due to Zn‐N bonding.