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P‐7: Improvement of PBTS Stability in Self‐Aligned Coplanar a‐IGZO TFTs
Author(s) -
Oh Saeroonter,
Baeck JuHeyuck,
Lee Dohyung,
Park Taeuk,
Shin Hyun Soo,
Bae Jong Uk,
Park KwonShik,
Kang Inbyeong
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10032
Subject(s) - materials science , insulator (electricity) , optoelectronics , capacitance , trap (plumbing) , chemistry , physics , electrode , meteorology
We improve the PBTS instability of top‐gate coplanar amorphous InGaZnO TFTs by optimizing the buffer and gate insulator layers. The interface trap density is obtained from photonic capacitance‐voltage measurements and correlated with PBTS characteristics. Inter‐diffusion at the gate insulator interface lessens electron trap defects, which brings improvement in PBTS from ΔV th = 4.2 V to 0.5 V.