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P‐6: Impact of Buffer Layers on the Self‐Aligned Top‐Gate a‐IGZO TFT Characteristics
Author(s) -
Nag Manoj,
Smout Steve,
Bhoolokam Ajay,
Muller Robert,
Ameys Marc,
Myny Kris,
Schols Sarah,
Cobb Brian,
Kumar Abhishek,
Gelinck Gerwin,
Murata Mitsuhiro,
Groeseneken Guido,
Heremans Paul,
Steudel Soeren
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10031
Subject(s) - thin film transistor , materials science , amoled , optoelectronics , layer (electronics) , plasma enhanced chemical vapor deposition , buffer (optical fiber) , atomic layer deposition , deposition (geology) , oxide thin film transistor , amorphous solid , backplane , chemical vapor deposition , nanotechnology , active matrix , computer science , chemistry , computer hardware , telecommunications , paleontology , organic chemistry , sediment , biology
In this work we present the impact of buffer layers deposited by various techniques such as plasma enhanced chemical deposition (PECVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) techniques on self‐aligned (SA) top gate amorphous‐Indium‐Gallium‐Zinc‐Oxide (a‐IGZO) TFT characteristics. Finally an optimized layer was integrated in TFT backplane on polyimide (PI) foil and a QQVGA AMOLED display is demonstrated.