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P‐5: Oxide Semiconductor/Polypropylene Carbonate Paste for A Thin‐Film Transistor using Screen Printing
Author(s) -
Matoba Akinari,
Fukada Kazuhiro,
Maeda Yojiro,
Liu Xi yun,
Nishioka Kiyoshi,
Fujimoto Nobutaka,
Suzuki Masahiro,
Yonezawa Yasuto,
Takagi Shinji,
Inoue Satoshi,
Shimoda Tatsuya
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10030
Subject(s) - materials science , polypropylene , semiconductor , screen printing , layer (electronics) , sintering , thin film , viscosity , thin film transistor , oxide , transistor , composite material , optoelectronics , nanotechnology , metallurgy , electrical engineering , engineering , voltage
We developed an oxide semiconductor paste in order to fabricate a thin‐film transistor using screen printing. Polypropylene carbonate, which decomposes completely after sintering, was used as an organic thickener to control the viscosity of the paste. The channel layer patterned by screen printing exhibited the desired semiconductor characteristics.
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