Open AccessParameters and mechanisms governing image contrast in scanning electron microscopy of single‐walled carbon nanotubes
Author(s) -
Wong W. K.,
Nojeh A.,
Pease R. F. W.
Publication year - 2006
Publication title -
scanning
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.359
H-Index - 47
eISSN - 1932-8745
pISSN - 0161-0457
DOI - 10.1002/sca.4950280404
Subject(s) - scanning electron microscope , carbon nanotube , materials science , nanoscopic scale , biasing , substrate (aquarium) , cathode ray , electron beam induced deposition , nanotechnology , acceleration voltage , electron , electron microscope , conductivity , optoelectronics , optics , voltage , scanning transmission electron microscopy , composite material , chemistry , physics , oceanography , quantum mechanics , geology
Image formation of single‐walled carbon nanotubes (SWNTs) in the scanning electron microscope (SEM) is peculiarly sensitive to primary electron landing energy, imaging history, sample/substrate geometry, electrical conductivity, sample contamination, and substrate charging. This sensitivity is probably due to the extremely small interaction volume of the SWNTs' monolayered, nanoscale structures with the electron beam. Traditional electron beam/bulk specimen interaction models appear unable to explain the contrast behavior when directly applied to SWNTs. We present one systematic case study of SWNT SEM imaging with special attention to the above parameters and propose some physical explanations for the effect of each. We also demonstrate that it is possible to employ voltage biasing to counteract this extrinsic behavior, gain better control of the image contrast, and facilitate the interpretation of SWNT images in the SEM.