Open AccessSectional voltage contrast topography of quantum well diodes
Author(s) -
Mil'shtein Sam,
Thurkins Eric,
Merritt Nathan,
Novaris Keith,
Therrien Joel
Publication year - 2001
Publication title -
scanning
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.359
H-Index - 47
eISSN - 1932-8745
pISSN - 0161-0457
DOI - 10.1002/sca.4950230402
Subject(s) - common emitter , laser , diode , materials science , voltage , optoelectronics , electron , population , optics , quantum , contrast (vision) , physics , demography , quantum mechanics , sociology
Detailed scanning electron microscopy (SEM) of an operational quantum well laser was performed using the differential voltage contrast (DVC) method. Quantitative measurements of Fermi energies in an operational device at high magnifications were possible due to a new calibration procedure described in this study. Precise tailoring of digitized DVC images of an operational laser taken at high and low magnifications is described. The ability to record and to analyze very detailed quasi‐Fermi energy (QFE) profiles across an operational laser or transistor with 30‐Angstrom features improved the DVC technique. A layered GaAs/Ga x Al 1−x As/In y Ga 1−y As quantum well light emitter was tested through various operational steps, that is, inverse population, threshold, and full emission. The detailed QFE profile allowed us to analyze collective electron behavior at various steps of operation of the laser.