Open AccessMonte carlo simulation of charging effects in linewidth metrology (II): On insulator substrate
Author(s) -
Ko YeongUk,
Chung MyungSae
Publication year - 1998
Publication title -
scanning
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.359
H-Index - 47
eISSN - 1932-8745
pISSN - 0161-0457
DOI - 10.1002/sca.4950200803
Subject(s) - laser linewidth , metrology , monte carlo method , offset (computer science) , scanning electron microscope , insulator (electricity) , materials science , substrate (aquarium) , optics , optoelectronics , physics , computer science , composite material , mathematics , laser , statistics , oceanography , programming language , geology
Charging effects have been investigated quantitatively using Monte Carlo (MC) simulation when the linewidth of polymethylmethacrylate (PMMA) insulator patterns on SiO 2 insulator substrate are measured by scanning electron microscope (SEM). We established reference operating and shape conditions for array patterns and we have calculated the offset on linewidth metrology according to the change in each condition. We have used a 50% threshold algorithm for the edge determination, calculated the offsets in those conditions, and compared them with the results in the case of Si substrate. Finally, the question of which factor is the most sensitive in linewidth metrology is discussed.