Open AccessImage simulation using Monte Carlo methods: Electron beam and detector characteristics
Author(s) -
Radzimski Zbigniew J.,
Russ John C.
Publication year - 1995
Publication title -
scanning
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.359
H-Index - 47
eISSN - 1932-8745
pISSN - 0161-0457
DOI - 10.1002/sca.4950170502
Subject(s) - monte carlo method , detector , optics , cathode ray , scattering , image quality , electron scattering , image (mathematics) , beam (structure) , electron , scanning electron microscope , computer science , computational physics , physics , artificial intelligence , mathematics , statistics , quantum mechanics
The rapid increase of computer speed allows using Monte Carlo simulation procedures for the analysis of complicated structures not only in a line scan mode but also in a three‐dimensional approach similar to the scanning procedure in a scanning electron microscope. Simulation of image formation is a vital link in performing image analysis to obtain precise measurements, to provide the necessary connection between image parameters and structural dimensions, and to reflect important microscope beam and detector parameters. Monte Carlo simulation based on a single‐scattering procedure was used for backscattered electron image simulation of three‐dimensional multilayer and multielement structures. The procedure takes into account the effect of a solid state detector's electrical and angular characteristics and the effect of the electron beam dimensions on the image quality and artifacts.