Open AccessCharacterisation of electronic and structural properties of thin silicon dioxide films by scanned probe microscopy
Author(s) -
Welland M. E.,
Murrell M. P.
Publication year - 1993
Publication title -
scanning
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.359
H-Index - 47
eISSN - 1932-8745
pISSN - 0161-0457
DOI - 10.1002/sca.4950150503
Subject(s) - silicon dioxide , silicon carbide , materials science , capacitor , silicon , thin film , dielectric strength , dielectric , microscopy , optoelectronics , oxide , resolution (logic) , scanning probe microscopy , analytical chemistry (journal) , nanotechnology , optics , composite material , electrical engineering , chemistry , voltage , computer science , physics , artificial intelligence , metallurgy , engineering , chromatography
This paper concerns the application of scanned probe microscopy to the study of thin silicon dioxide films. We show how the formation of 7 nm diameter silicon carbide particles on a silicon surface during high temperature processing affects the quality of subsequently grown oxide. To measure the local dielectric properties of thin oxides we have developed a new type of probe measurement which allows high resolution surface imaging, based on an atomic force microscope, combined with local electrical measurements. The spatial resolution of the electrical measurements was shown to be < 40 nm. Applying the technique to 500 nm capacitors fabricated on device quality oxide it was shown that some capacitors broke down during imaging while others remained stable at electric fields up to 30 MVcm −1 . This higher breakdown strength may have substantial impact on future electronic device reliablity and performance.