Open AccessScanning deep level transient spectroscopy (SDLTS)
Author(s) -
Breitenstein O.,
Heydenreich J.
Publication year - 1985
Publication title -
scanning
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.359
H-Index - 47
eISSN - 1932-8745
pISSN - 0161-0457
DOI - 10.1002/sca.4950070602
Subject(s) - deep level transient spectroscopy , transient (computer programming) , spectroscopy , materials science , excitation , instrumentation (computer programming) , scanning electron microscope , signal (programming language) , semiconductor , resolution (logic) , optoelectronics , optics , physics , computer science , quantum mechanics , artificial intelligence , silicon , composite material , programming language , operating system
Scanning Deep Level Transient Spectroscopy (SDLTS) is a current SEM technique for the detection of the local distribution of deep level centres in semiconductors. It is based on the application of the widely used Deep Level Transient Spectroscopy (DLTS), which enables capacitance changes (or current changes) to be measured in a space charge structure after an excitation pulse as a function of the temperature. This makes it possible to detect the energy levels and the concentration of electronic states in the band gap. By means of scanning DLTS–i.e. the excitation of the levels by an electron probe–deep level states can be investigated with a spatial resolution of a few microns. Scanning the pulsed electron beam (at a temperature selected according to an interesting energy level) yields an SDLTS image. Based on the general principle of the measurement and on the necessary instrumentation the practice of the SDLTS signal generation analysis is presented and experimental examples are discussed.