Open AccessMeasurements of electron channeling pattern linewidths in silicon
Author(s) -
Farrow R. C.,
Joy D. C.
Publication year - 1979
Publication title -
scanning
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.359
H-Index - 47
eISSN - 1932-8745
pISSN - 0161-0457
DOI - 10.1002/sca.4950020407
Subject(s) - silicon , electron , optics , signal (programming language) , cathode ray , lattice (music) , physics , reciprocal lattice , materials science , line (geometry) , atomic physics , optoelectronics , nuclear physics , mathematics , programming language , geometry , computer science , acoustics , diffraction
Using a new method for improving the signal‐to‐noise of electron channeling pattern (ECP) contrast, preliminary quantitative measurements of the linewidths of ECP lines in silicon have been performed. The signal‐to‐noise was improved by utilizing a boxcar integrating circuit whose gating logic was referenced to the SEM horizontal scan signal. The measurements were done on the (220) series of reflections from 18 and 25 keV incident electrons by monitoring the specimen current as the SEM was scanning in the line mode. The measured linewidths are consistent with those predicted by the two beam theory of ECP intensity when the affects of the incident beam divergence, α, are accounted for. The appearance of ECP lines from very high order reflections is an indication that the limit of the reciprocal lattice vector, g, of a line that can be resolved in an ECP is limited more by the sample than by α. The finite α appears only to broaden the linewidths of higher order lines. These studies are being pursued to explore the potential of this technique for the study of crystalline perfection.