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Accurate ultra‐low‐energy secondary ion mass spectrometry analysis of wide bandgap GaN/In x Ga 1– x N structures using optical conductivity enhancement
Author(s) -
Morris R. J. H.,
Dowsett M. G.,
Beanland R.,
Parbrook P. J.,
McConville C. F.
Publication year - 2010
Publication title -
rapid communications in mass spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.528
H-Index - 136
eISSN - 1097-0231
pISSN - 0951-4198
DOI - 10.1002/rcm.4623
Subject(s) - chemistry , electrical resistivity and conductivity , secondary ion mass spectrometry , ion , conductivity , band gap , optoelectronics , analytical chemistry (journal) , charge (physics) , materials science , electrical engineering , physics , organic chemistry , chromatography , quantum mechanics , engineering
Ultra‐low‐energy secondary ion mass spectrometry has been used to undertake a structural analysis of GaN–In x Ga 1– x N ( x ∼0.25) quantum wells used in optoelectronic devices. The high resistivity of intrinsic GaN–In x Ga 1– x N restricts the necessary electrical path between the analyzed area and the instrument ground potential resulting in surface charge accumulation. Consequently, unstable and unrepresentative depth profiles tend to be produced. A technique known as optical conductivity enhancement (OCE) has been used during depth profiling to reduce the material resistivity. This creates an electrical path between the sample and holder, eliminating charge build up and resulting in accurate depth profiles. Copyright © 2010 John Wiley & Sons, Ltd.