Premium
Back Cover: Quantum Sensing of Insulator‐to‐Metal Transitions in a Mott Insulator (Adv. Quantum Technol. 5/2021)
Author(s) -
McLaughlin Nathan J.,
Kalcheim Yoav,
Suceava Albert,
Wang Hailong L.,
Schuller Ivan K.,
Du Chunhui Rita
Publication year - 2021
Publication title -
advanced quantum technologies
Language(s) - English
Resource type - Journals
ISSN - 2511-9044
DOI - 10.1002/qute.202170053
Subject(s) - mott insulator , nanoscopic scale , materials science , condensed matter physics , insulator (electricity) , quantum , engineering physics , metal–insulator transition , nanotechnology , topological insulator , optoelectronics , physics , metal , quantum mechanics , metallurgy
The back cover of this issue, referring to article number 2000142 by Chunhui Rita Du and co‐workers, represents the authors' work on measuring insulator‐to‐metal transition in a Mott insulator using nitrogen‐vacancy (NV) centers in diamond. An optically active NV center works as a nanoscale quantum sensor to locally probe the temperature and magnetic field environment of the current filaments between gold contacts on a film of vanadium dioxide, revealing the fundamental mechanism of insulator‐to‐metal transition. This research highlights the opportunities offered by NV centers in exploring nanoscale thermal and electrical behaviors in Mott materials which might have applications in developing cutting‐edge neuromorphic computing platforms. [Cover design: Gerald Yan]