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Deterministic Integration of hBN Emitter in Silicon Nitride Photonic Waveguide
Author(s) -
Elshaari Ali W.,
Skalli Anas,
Gyger Samuel,
Nurizzo Martin,
Schweickert Lucas,
Esmaeil Zadeh Iman,
Svedendahl Mikael,
Steinhauer Stephan,
Zwiller Val
Publication year - 2021
Publication title -
advanced quantum technologies
Language(s) - English
Resource type - Journals
ISSN - 2511-9044
DOI - 10.1002/qute.202100032
Subject(s) - photonics , common emitter , optoelectronics , photon , materials science , waveguide , silicon photonics , photonic integrated circuit , quantum optics , quantum , physics , optics , quantum mechanics
Abstract Hybrid integration provides an important avenue for incorporating atom‐like solid‐state single‐photon emitters into photonic platforms that possess no optically‐active transitions. Hexagonal boron nitride (hBN) is particularly interesting quantum emitter for hybrid integration, as it provides a route for room‐temperature quantum photonic technologies, coupled with its robustness and straightforward activation. Despite the recent progress of integrating hBN emitters in photonic waveguides, a deterministic, site‐controlled process remains elusive. Here, the integration of selected hBN emitter in silicon nitride waveguide is demonstrated. A small misalignment angle of 4° is shown between the emission‐dipole orientation and the waveguide propagation direction. The integrated emitter maintains high single‐photon purity despite subsequent encapsulation and nanofabrication steps, delivering quantum light with zero delay second order correlation functiong ( 2 )( 0 ) = 0.1 ± 0.05 . The results provide an important step toward deterministic, large scale, quantum photonic circuits at room temperature using atom‐like single‐photon emitters.