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Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide
Author(s) -
Bathen Marianne Etzelmüller,
Vines Lasse
Publication year - 2021
Publication title -
advanced quantum technologies
Language(s) - English
Resource type - Journals
ISSN - 2511-9044
DOI - 10.1002/qute.202100003
Subject(s) - spins , semiconductor , photon , diamond , photonics , silicon carbide , optoelectronics , quantum technology , quantum information science , physics , crystallographic defect , materials science , quantum , condensed matter physics , quantum entanglement , optics , quantum mechanics , open quantum system , metallurgy , composite material
Point defects in semiconductors are emerging as an important contender platform for quantum technology (QT) applications, showing potential for quantum computing, communication, and sensing. Indeed, point defects have been employed as nuclear spins for nanoscale sensing and memory in quantum registers, localized electron spins for quantum bits, and emitters of single photons in quantum communication and cryptography. However, to utilize point defects in semiconductors as single‐photon sources for QT, control over the influence of the surrounding environment on the emission process must be first established. Recent works have revealed strong manipulation of emission energies and intensities via coupling of point defect wavefunctions to external factors such as electric fields, strain and photonic devices. This review presents the state‐of‐the‐art on manipulation, tuning, and control of single‐photon emission from point defects focusing on two leading semiconductor materials—diamond and silicon carbide.