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Proximity‐Induced Magnetism Enhancement Emerged in Chiral Magnet MnSi/Topological Insulator Bi 2 Se 3 Bilayer
Author(s) -
Choi WonYoung,
Jeon Jae Ho,
Bang HyunWoo,
Yoo Woosuk,
Jerng SahngKyoon,
Chun SeungHyun,
Lee Sunghun,
Jung MyungHwa
Publication year - 2021
Publication title -
advanced quantum technologies
Language(s) - English
Resource type - Journals
ISSN - 2511-9044
DOI - 10.1002/qute.202000124
Subject(s) - topological insulator , condensed matter physics , spintronics , magnetism , ferromagnetism , bilayer , materials science , molecular beam epitaxy , curie temperature , magnetization , proximity effect (electron beam lithography) , surface states , topology (electrical circuits) , epitaxy , nanotechnology , layer (electronics) , physics , surface (topology) , magnetic field , chemistry , electron beam lithography , resist , geometry , quantum mechanics , biochemistry , mathematics , membrane , combinatorics
A proximity effect between magnetic materials and topological surface states can generate and modulate the localized spins without complicated material structures, but its origin is not clearly verified. MnSi single layer and MnSi/Bi 2 Se 3 bilayer on Al 2 O 3 (001) substrates are fabricated by magnetron co‐sputtering and molecular beam epitaxy systems, in which a large proximity effect between the chiral magnetic structure and the topological surface states is manifested. The magnetic and electronic properties of both samples are meticulously compared and the proximity‐induced magnetism enhancement in the MnSi/Bi 2 Se 3 bilayer is found. Interestingly, this effect persists up to temperatures above 300 K. Furthermore, for the MnSi/Bi 2 Se 3 bilayer, the increase of charge carrier density and the decrease of carrier mobility near the Curie temperature T C = 40 K are observed, which can mediate the ferromagnetic exchange interaction enhancing the magnetization. The finding provides insight into a new platform to consist of materials with distinct topological phases for future spintronic devices.