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Enhanced Spin Hall Effect in S‐Implanted Pt
Author(s) -
Shashank Utkarsh,
Medwal Rohit,
Shibata Taiga,
gjai Razia,
Vas Joseph Vimal,
Duchamp Martial,
Asokan Kandasami,
Rawat Rajdeep Singh,
Asada Hironori,
Gupta Surbhi,
Fukuma Yasuhiro
Publication year - 2021
Publication title -
advanced quantum technologies
Language(s) - English
Resource type - Journals
ISSN - 2511-9044
DOI - 10.1002/qute.202000112
Subject(s) - spintronics , spin hall effect , spin (aerodynamics) , condensed matter physics , figure of merit , hall effect , magnetization , materials science , spin pumping , energy conversion efficiency , thermal conduction , electrical resistivity and conductivity , optoelectronics , physics , spin polarization , electron , ferromagnetism , magnetic field , quantum mechanics , thermodynamics , composite material
High efficiency of charge–spin interconversion in spin Hall materials is a prime necessity to apprehend intriguing functionalities of spin–orbit torque for magnetization switching, auto‐oscillations, and domain wall motion in energy‐efficient and high‐speed spintronic devices. To this end, innovations in fabricating advanced materials that possess not only large charge–spin conversion efficiency but also viable electrical and spin Hall conductivity are of importance. Here, a new spin Hall material designed by implanting low energy 12 keV sulfur ions in heavy metal Pt, named as Pt(S), is reported that demonstrates eight times higher conversion efficiency as compared to pristine Pt. The figure of merit, spin Hall angle ( θ SH ), up to θ SH Pt ( S ) of 0.502 together with considerable electrical conductivity σ xx Pt ( S ) of 1.65 × 10 6 Ω –1  m –1 is achieved. The spin Hall conductivityσ SH Pt ( S )increases with increasing σ xx Pt ( S ) , asσ SH Pt ( S ) ∝ σ xxPt ( S ) 1.7, implying an intrinsic mechanism in a dirty metal conduction regime. A comparatively large σ SH Pt ( S )of 8.32 × 10 5 ( ℏ 2 e ) Ω –1  m –1 among the reported heavy‐metals‐based alloys can be useful for developing next‐generation spintronic devices using spin–orbit torque.

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