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Highly Enhanced Curie Temperature in Ga‐Implanted Fe 3 GeTe 2 van der Waals Material
Author(s) -
Yang Mengmeng,
Li Qian,
Chopdekar Rajesh V.,
Stan Camelia,
Cabrini Stefano,
Choi Jun Woo,
Wang Sheng,
Wang Tianye,
Gao Nan,
Scholl Andreas,
Tamura Nobumichi,
Hwang Chanyong,
Wang Feng,
Qiu Ziqiang
Publication year - 2020
Publication title -
advanced quantum technologies
Language(s) - English
Resource type - Journals
ISSN - 2511-9044
DOI - 10.1002/qute.202000017
Subject(s) - curie temperature , spintronics , materials science , van der waals force , condensed matter physics , ferromagnetism , magnetization , valence (chemistry) , curie , chemistry , magnetic field , physics , organic chemistry , quantum mechanics , molecule
Among many efforts in the research of van der Waals (vdW) magnetic materials, increasing the Curie temperature above room temperature has been at the center of research in developing spintronics technology using vdW materials. Here an effective and reliable method of increasing the Curie temperature of ferromagnetic Fe 3 GeTe 2 vdW materials by Ga implantation is reported. It is found that implanting Ga into Fe 3 GeTe 2 by the amount of 10 −3 Ga Å −3 could greatly enhance the Fe 3 GeTe 2 Curie temperature by almost 100%. Spatially resolved microdiffraction and element‐resolved X‐ray absorption spectroscopy show little changes in the Fe 3 GeTe 2 crystal structure and Fe valence state. In addition, the Ga implantation changes the Fe 3 GeTe 2 magnetization from out‐of‐plane direction at low temperature to in‐plane direction at high temperature. The result opens a new opportunity for tailoring the magnetic properties of vdW materials beyond room temperature.