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High‐Purity Triggered Single‐Photon Emission from Symmetric Single InAs/InP Quantum Dots around the Telecom C‐Band Window
Author(s) -
Musiał Anna,
Holewa Paweł,
Wyborski Paweł,
Syperek Marcin,
Kors Andrei,
Reithmaier Johann Peter,
Sęk Grzegorz,
Benyoucef Mohamed
Publication year - 2020
Publication title -
advanced quantum technologies
Language(s) - English
Resource type - Journals
ISSN - 2511-9044
DOI - 10.1002/qute.201900082
Subject(s) - quantum dot , photoluminescence , photon , physics , optoelectronics , optics , distributed bragg reflector , molecular beam epitaxy , excitation , materials science , epitaxy , laser , nanotechnology , quantum mechanics , layer (electronics)
The authors demonstrate pure triggered single‐photon emission from quantum dots (QDs) around the telecommunication C‐band window, with characteristics preserved under non‐resonant excitation at saturation, that is, the highest possible, lifetime‐limited emission rates. The direct measurement of emission dynamics reveals photoluminescence decay times in the range of (1.7–1.8) ns corresponding to maximal photon generation rates exceeding 0.5 GHz. The measurements of the second‐order correlation function exhibit, for the best case, a lack of coincidences at zero time delay—no multiple photon events are registered within the experimental accuracy. This is achieved by exploiting a new class of low‐density and in‐plane symmetric InAs/InP QDs grown by molecular beam epitaxy on a distributed Bragg reflector, perfectly suitable for non‐classical light generation for quantum optics experiments and quantum‐secured fiber‐based optical communication schemes.