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Ultra‐Long Lifetimes of Single Quantum Emitters in Monolayer WSe 2 /hBN Heterostructures
Author(s) -
Dass Chandriker Kavir,
Khan Mahtab A.,
Clark Genevieve,
Simon Jeffrey A.,
Gibson Ricky,
Mou Shin,
Xu Xiaodong,
Leuenberger Michael N.,
Hendrickson Joshua R.
Publication year - 2019
Publication title -
advanced quantum technologies
Language(s) - English
Resource type - Journals
ISSN - 2511-9044
DOI - 10.1002/qute.201900022
Subject(s) - heterojunction , exciton , quantum dot , photon , monolayer , atomic physics , fine structure , materials science , quantum well , physics , optoelectronics , molecular physics , condensed matter physics , optics , nanotechnology , laser
Here, ultra‐long lifetimes of defect‐trapped single quantum emitters (SQEs) in monolayer WSe 2 /hBN heterostructures are reported. The lifetimes of these SQEs are approximately 225 ns, more than two orders of magnitude larger than what has been previously reported for defect‐trapped excitons in WSe 2 . These SQEs consist of co‐linearly polarized doublet peaks with a fine structure splitting of 0.45 meV. Second‐order correlation measurements show antibunched single‐photon emission with a g (2) (0) value of ≈0.13. Through numerical analysis and modeling, it is shown how such long‐lifetime single emitters can arise from bright and dark exciton coupling in antisite defects on the W sites. Additionally, high‐quality single‐photon emission over a wide range of lifetimes—from 2 ns to over 200 ns—is also reported, suggesting a variety of other possible defect structures present. The flexibility to generate high fidelity single‐photon emission, over a wide range of lifetimes in a single material system, has potential in many optical quantum computing applications from high‐bit‐rate single‐photon sources to quantum memory devices.