Controlling the Charge Density Wave Transition in Monolayer TiSe 2 : Substrate and Doping Effects

TiSe 2 is an exciting material because it can be tuned between superconducting and charge density wave (CDW) transitions. In the monolayer limit, TiSe 2 exhibits a sizable energy gap in the CDW phase that makes it a promising quantum material. It is shown that interfacing a single layer of TiSe 2 with dissimilar van der Waals materials enables control of its properties. Using angle‐resolved photoemission spectroscopy, the energy gap opening is analyzed as a function of temperature for TiSe 2 monolayers supported on different van der Waals substrates. A substantial increase in the CDW transition temperature of ≈45 K is observed on MoS 2 compared to graphite (highly oriented pyrolytic graphite) substrates. This control of the CDW in monolayer TiSe 2 is suggested to arise from varying charge screening of the unconventional CDW of TiSe 2 by the substrate. In addition, the suppression of CDW order and a complete closing of the energy gap by electron doping of monolayer TiSe 2 is demonstrated. Regulating the many‐body physics phenomena in monolayer TiSe 2 lays the foundation of modifying TiSe 2 in, for example, artificial van der Waals heterostructures and thus creates a new approach for utilizing the quantum states of TiSe 2 in device applications.