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The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon
Author(s) -
Peach Tom,
Homewood Kevin,
Lourenco Ma,
Hughes Mark,
Saeedi Kaymar,
Stavrias Nik,
Li Juerong,
Chick Steven,
Murdin Ben,
Clowes Steven
Publication year - 2018
Publication title -
advanced quantum technologies
Language(s) - English
Resource type - Journals
ISSN - 2511-9044
DOI - 10.1002/qute.201800038
Subject(s) - hyperfine structure , annealing (glass) , ion implantation , silicon , materials science , bismuth , ion , photoluminescence , condensed matter physics , analytical chemistry (journal) , atomic physics , chemistry , optoelectronics , metallurgy , chromatography , physics , organic chemistry
This study reports on high energy bismuth ion implantation into silicon with a particular emphasis on the effect that annealing conditions have on the observed hyperfine structure of the Si:Bi donor state. A suppression of donor bound exciton, D 0 X, photoluminescence is observed in implanted samples which have been annealed at 700 °C relating to the presence of a dense layer of lattice defects that is formed during the implantation process. Hall measurments at 10 K show that this implant damage manifests itself at low temperatures as an abundance of p‐type charge carriers, the density of which is observed to have a strong dependence on annealing temperature. Using resonant D 0 X photoconductivity, we are able to identify the presence of a hyperfine structure in samples annealed at a minimum temperature of 800 °C; however, higher temperatures are required to eliminate effects of implantation strain.