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Interband transitions of Si δ‐doped layers in p‐Type GaAs
Author(s) -
Scolfaro L. M. R.,
Mendonçla C. A. C.,
Menezes E. A.,
Martins J. M. V.,
Leite J. R.
Publication year - 1990
Publication title -
international journal of quantum chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.484
H-Index - 105
eISSN - 1097-461X
pISSN - 0020-7608
DOI - 10.1002/qua.560382444
Subject(s) - doping , materials science , condensed matter physics , type (biology) , optoelectronics , chemistry , physics , geology , paleontology
The two‐dimensional (2D) electron gas present in Si δ‐doped layers in p‐type GaAs is investigated through photoreflectance (PR) measurements performed at 300 and 77 K. The obtained spectra show oscillatory structures above the GaAs band gap which are ascribed to Franz–Keldysh oscillations. The decrease in the energy differences of the oscillations extrema with temperature indicates a reduction of the built‐in electric field in the δ‐doped region. The values of the electric field extracted from the experimental data are compared with those obtained from theoretical calculations based on a simultaneous self‐consistent solution of the Schrödinger and Poisson equations. The agreement between theory and experiment strongly indicate that the observed oscillatory structures in the PR spectra are due to transitions to electron states of the 2D electron gas.