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Hydrogen passivation of shallow donors in silicon
Author(s) -
Da Silva E. C. F.,
Assali L. V. C.,
Leite J. R.
Publication year - 2009
Publication title -
international journal of quantum chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.484
H-Index - 105
eISSN - 1097-461X
pISSN - 0020-7608
DOI - 10.1002/qua.560360871
Subject(s) - silicon , hydrogen , impurity , shallow donor , chemistry , atomic physics , valence (chemistry) , atom (system on chip) , hydrogen atom , passivation , hamiltonian (control theory) , molecular physics , physics , mathematical optimization , alkyl , mathematics , organic chemistry , layer (electronics) , computer science , embedded system
The Green's function technique within the framework of a valence‐force‐field Hamiltonian has been used to study the vibrational properties of the donor–hydrogen complexes, for the donors P, As, and Sb in silicon. The A 1 and E vibrational energies of the complex were investigated by adopting two atomic configurations corresponding to different positions for the hydrogen atom relative to the donor impurity. According to the currently accepted configuration H is bonded to a silicon atom. Another possibility is to assume that H is directly bonded to the donor impurity. We have shown that both models reproduce all the vibrational energies which have been measured for these pair complexes until now.